Optics and Precision Engineering, Volume. 19, Issue 2, 452(2011)

808 nm kW-output high-efficiency diode laser sources

SHAN Xiao-nan*... LIU Yun and CAO Jun-sheng |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less

    A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting,translating,and rearranging by a parallel plate glass stack.The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar,19 light-emitting points of 1 μm×135 μm each and 30% filling factor to expand beam at a slow axis through a telescope system,and also uses a focusing lens to focus on both the slow axis and the fast one at the same time. Experiments show that the technique can achieve the 1 kW output power on the focal plane,focused spot of 1 mm×1 mm and coupling efficiency of 90%,which basically satisfies the needs of laser cladding and welding.

    Tools

    Get Citation

    Copy Citation Text

    SHAN Xiao-nan, LIU Yun, CAO Jun-sheng. 808 nm kW-output high-efficiency diode laser sources[J]. Optics and Precision Engineering, 2011, 19(2): 452

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Oct. 8, 2010

    Accepted: --

    Published Online: Mar. 30, 2011

    The Author Email: Xiao-nan SHAN (shanxiaon@sina.com)

    DOI:

    CSTR:32186.14.

    Topics