Optics and Precision Engineering, Volume. 19, Issue 2, 452(2011)
808 nm kW-output high-efficiency diode laser sources
A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting,translating,and rearranging by a parallel plate glass stack.The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar,19 light-emitting points of 1 μm×135 μm each and 30% filling factor to expand beam at a slow axis through a telescope system,and also uses a focusing lens to focus on both the slow axis and the fast one at the same time. Experiments show that the technique can achieve the 1 kW output power on the focal plane,focused spot of 1 mm×1 mm and coupling efficiency of 90%,which basically satisfies the needs of laser cladding and welding.
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SHAN Xiao-nan, LIU Yun, CAO Jun-sheng. 808 nm kW-output high-efficiency diode laser sources[J]. Optics and Precision Engineering, 2011, 19(2): 452
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Received: Oct. 8, 2010
Accepted: --
Published Online: Mar. 30, 2011
The Author Email: Xiao-nan SHAN (shanxiaon@sina.com)
CSTR:32186.14.