Frontiers of Optoelectronics, Volume. 2, Issue 4, 442(2009)
InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices
In this study, we fabricated and characterized an InGaN/GaN multi-quantum-well (MQW)-based p-n junction photodetector (PD) for voltage-selective lightemitting and photo-detective applications. The photodetector exhibits a cutoff wavelength at around 460 nm which is close to its electroluminescence (EL) peak position. The rejection ratio was determined to be more than three orders of magnitude. Under zero bias, the responsivity of the device peaks at 371 nm, with a value of 0.068 A/W, corresponding to a 23% quantum efficiency. The overall responsivity gradually rises as a function of reverse bias, which is explained by the enhanced photocarrier collection efficiency.
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Cao MIAO, Hai LU, Dunjun CHEN, Rong ZHANG, Youdou ZHENG. InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices[J]. Frontiers of Optoelectronics, 2009, 2(4): 442
Received: Jun. 30, 2009
Accepted: Jul. 24, 2009
Published Online: Oct. 8, 2012
The Author Email: MIAO Cao (miaocao321@163.com)