Laser & Optoelectronics Progress, Volume. 51, Issue 3, 32301(2014)
Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier
InGaN/GaN superlattice (SL) barrier near p- GaN and n- GaN are designed to replace the conventional GaN barrier of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). The lightvoltage performance curves, electroluminescence (EL) characteristics, energy band diagrams, electron concentration and radiative recombination rate of LEDs with SL barrier near p- GaN and n- GaN have been studied numerically. The results indicate that the InGaN/GaN LED with SL barrier near n- GaN improves light output performance mane than that near p- GaN. The improved performance is due to the enhanced injection efficiency of electrons and radiative recombination rate.
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Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier[J]. Laser & Optoelectronics Progress, 2014, 51(3): 32301
Category: Optical Devices
Received: Oct. 22, 2013
Accepted: --
Published Online: Mar. 3, 2014
The Author Email: Guofeng Yang (gfyang@jiangnan.edu.cn)