The step superlattice (SSL) electron blocking layer (EBL) and wedge-shaped (WS) hole blocking layer (HBL) are proposed to improve the carrier injection efficiency, and optimize the performance of the deep ultraviolet laser diodes (DUV LDs). The Crosslight software is used to simulate the DUV LDs with rectangular EBL and HBL, rectangular superlattice (RSL) EBL and tower-shaped (TS) HBL, and SSL EBL and WS HBL, respectively. The simulation results indicate that SSL EBL and WS HBL increase the carrier injection in the quantum wells (QWs), reduce the carrier leakage in the non-active regions, increase radiation recombination rate, reduce the threshold voltage and threshold current, and increase the output power and the electro-optical conversion efficiency of DUV LDs more effectively.