Aiming at the characteristics of large dark current of photoconductive graphene detector, based on the analysis of several dark current suppression circuits, a novel dark current suppression circuit with low temperature coefficient is designed by using the capacitive trans-impedance amplifier (CTIA) integration circuit. The simulation analysis results show that the structure has good dark current suppression capability. Compared with the traditional CTIA structure, the integral saturation time of this structure is significantly improved, and it has good integral uniformity and output linearity. In the temperature range of -20 ℃--40 ℃, the current-temperature error rate is 0.15%, and the voltage offset is less than 80 mV, which can maintain good dark current suppression function at room temperature. The detector bias voltage drift is improved by 88.7%, which provides a guarantee for the stable operation of the detector. At the same time, the suppression current is adjustable, which provides a reference for improving the non-uniformity of graphene-based detector pixels and preparing large-scale graphene-based detector arrays in the future.