Acta Optica Sinica, Volume. 13, Issue 5, 388(1993)
Study of visible light-emitting porous silicon by using infrared-upconversion luminescence generation
The efficient infrared-upconversion luminescence generation, which was considered as an enhanced third-order nonlinear optical process by our primary study, was used as a probe of the bulk symmetry properties and mechanism of light-emitting porous silicon layer (PSL). It was found that the crystalline anisotropy of crystal silicon is almost remained for PSL. The observation of laser-induced decreasing of infrared-upconversion signal demonstrated that the presence of hydrogen in the PSL, is essential to the luminescence efficency.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of visible light-emitting porous silicon by using infrared-upconversion luminescence generation[J]. Acta Optica Sinica, 1993, 13(5): 388