Infrared and Laser Engineering, Volume. 50, Issue 1, 20211017(2021)
Research progress of two-dimensional semiconductor infrared photodetector (Invited)
Infrared detection plays an important role in cutting-edge fields such as biomedicine, smart cities, and space exploration. In recent years, a new type of nanoscale semiconductor represented by two-dimensional materials is one of the candidates for a new generation of infrared photodetection technology. This is due to the fact that some index of two-dimensional materials device have exceeded the theoretical limits of traditional thin-film devices, such as detection sensitivity, ultralow dark current, high working temperature, etc. Two dimensional materials can easily be controlled by local field. In this review, the mechanism of three local fields to achieve high performance at room temperature were introduced in the first part, including ferroelectric local field, the interlayer built-in electric field, and the in-plane built-in electric field. Secondly, we introduced the photoelectric enhancement methods of unilateral depletion heterojunction and surface plasmon structure to solve the problem of low quantum efficiency and low light absorption caused by atomic thin effect of two-dimensional materials. Finally, we showed some applications of two-dimensional materials in infrared photodetection field. The exploration reveals the potential and prospect of the novel two-dimensional semiconductor in the field of infrared photodetection, which provides some new methods and ideas for the new generation infrared detector technology.
Get Citation
Copy Citation Text
Hangyu Xu, Peng Wang, Xiaoshuang Chen, Weida Hu. Research progress of two-dimensional semiconductor infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211017
Category: Frontier technology of infrared photodetector $ Materials and devices for low-dimensional infrared detection
Received: Nov. 9, 2020
Accepted: --
Published Online: Mar. 24, 2021
The Author Email: