Acta Photonica Sinica, Volume. 41, Issue 6, 708(2012)

KGW External Resonator High Power 579 nm Raman Yellow Laser

JIN Chenjie1,2,3、*, LI Lifei1,3, REN Zhaoyu1,3, BAI Jintao1,2,3, BAI Yang1,3, and HE Qingli4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    The output characteristics of 579 nm high power resonator KGd(WO4)2 Raman yellow laser were reported. 579.54 nm yellow laser was generated based on 808nm pulse LD sidepumped ceramic Nd∶YAG, BBO electrooptical Qswitched and typeI critical phasematching LBO crystal extracavity frequency doubling project. With the 5.02 W, 10.1 ns and 1 kHz output power pumped at 532 nm, the laser produced high average power of 2.58 W and pulses of 7.4 ns duration secondStokes wavelength at 579.54 nm. Conversion efficiency was 51.4% and slope efficiency was 54.8%. The beam quality factors M2 of 579.54 nm were M2x-579.54=5.829, M2y-579.54=6.336 and power instability less than ±2.35%. Experimental results indicate that external resonator Raman structure is an effective method for obtaining Raman yellow laser with its high opticaltooptical conversion and good power stability. Moreover, the additional usage of pulse LD with synchronous electrooptical Qswitch could generate high repetition rate, high average power, narrow pulse width and high peak power yellow laser.

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    JIN Chenjie, LI Lifei, REN Zhaoyu, BAI Jintao, BAI Yang, HE Qingli. KGW External Resonator High Power 579 nm Raman Yellow Laser[J]. Acta Photonica Sinica, 2012, 41(6): 708

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    Paper Information

    Received: Dec. 29, 2011

    Accepted: --

    Published Online: Jun. 19, 2012

    The Author Email: Chenjie JIN (kjcjkjcj@gmail.com)

    DOI:10.3788/gzxb20124106.0708

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