Acta Photonica Sinica, Volume. 41, Issue 6, 708(2012)
KGW External Resonator High Power 579 nm Raman Yellow Laser
The output characteristics of 579 nm high power resonator KGd(WO4)2 Raman yellow laser were reported. 579.54 nm yellow laser was generated based on 808nm pulse LD sidepumped ceramic Nd∶YAG, BBO electrooptical Qswitched and typeI critical phasematching LBO crystal extracavity frequency doubling project. With the 5.02 W, 10.1 ns and 1 kHz output power pumped at 532 nm, the laser produced high average power of 2.58 W and pulses of 7.4 ns duration secondStokes wavelength at 579.54 nm. Conversion efficiency was 51.4% and slope efficiency was 54.8%. The beam quality factors M2 of 579.54 nm were M2x-579.54=5.829, M2y-579.54=6.336 and power instability less than ±2.35%. Experimental results indicate that external resonator Raman structure is an effective method for obtaining Raman yellow laser with its high opticaltooptical conversion and good power stability. Moreover, the additional usage of pulse LD with synchronous electrooptical Qswitch could generate high repetition rate, high average power, narrow pulse width and high peak power yellow laser.
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JIN Chenjie, LI Lifei, REN Zhaoyu, BAI Jintao, BAI Yang, HE Qingli. KGW External Resonator High Power 579 nm Raman Yellow Laser[J]. Acta Photonica Sinica, 2012, 41(6): 708
Received: Dec. 29, 2011
Accepted: --
Published Online: Jun. 19, 2012
The Author Email: Chenjie JIN (kjcjkjcj@gmail.com)