Frontiers of Optoelectronics, Volume. 5, Issue 1, 41(2012)
Ge-on-Si for Si-based integrated materials and photonic devices
This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology. Recently, the realities of electric-pump Ge light emitting diode (LED) and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh (FK) effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Sibased optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.
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Weixuan HU, Buwen CHENG, Chunlai XUE, Shaojian SU, Haiyun XUE, Yuhua ZUO, Qiming WANG. Ge-on-Si for Si-based integrated materials and photonic devices[J]. Frontiers of Optoelectronics, 2012, 5(1): 41
Received: Sep. 30, 2011
Accepted: Nov. 15, 2011
Published Online: Sep. 10, 2012
The Author Email: CHENG Buwen (cbw@semi.ac.cn)