Chinese Journal of Quantum Electronics, Volume. 29, Issue 4, 491(2012)
Density states properties of photonic crystal with group III-V semiconductor material
Density states properties of two-dimension square lattice photonic crystals with III-V AlP, AlAs, AlSb and GaP semiconductor material were calculated by plane wave expansion method (PWM). The results showed that they have wide photonic band gaps. The width of band gap increases gradually with the increasing of permittivity difference and gets the maximum value at f=0.2a in the normalized frequency. The data reveals among these photonic crystals, the one with AlSb has the widest band gap. All these results provide theoretic basis for the photonic crystal devices.
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CHEN Shi-qin. Density states properties of photonic crystal with group III-V semiconductor material[J]. Chinese Journal of Quantum Electronics, 2012, 29(4): 491
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Received: Jan. 4, 2012
Accepted: --
Published Online: Oct. 8, 2012
The Author Email: Shi-qin CHEN (chenshiqin6@126.com)