The growth conditions and optical properties of InGaN/GaN dual-wavelength light-emitting diodes structures were studied. The optimized dual-wavelength quantum well parameters were obtained by designing several groups of epitaxy structures with different parameters. The optical properties of the dual-wavelength light-emitting diodes devices were also studied. The results show that light emitting of quantum well depends on localized exciton emitting caused by In clusters, which also leads to abnormal optical phenomenon under small current. Mechanism of the dual-wavelength peaks drift was explained through numerical calculation of internal polarization field in InGaN/GaN quantum-well. Luminous efficiency under different drive current of dual-wavelength light-emitting diodes was investigated and the possible reason of "droop" effect was given.