The 14xxnm AlGaInAs/AlInAs/InP Strained Quantum Well Lasers with Tapered Gain Regions and with Ridge Waveguide is fabricated under the same experimental condition. The laser structure is grown by MOCVD. The output power and the saturation current of the former structure is higher than the latter under the same driving current when the cavity length is 800 μm. When the cavity length is 1200 μm the output power above 500 mW and the saturation current above 3 A have been achieved for the former structure. The measured vertical and parallel divergence angle are 39° and 11°, respectively.