Chinese Optics Letters, Volume. 9, Issue 8, 082301(2011)
Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85\times 38.4 (\mu m), threshold voltage is 2.2 V in common condition, and temperature is 27 oC. The external quantum efficiency is about 10^{-6} at stable operating state of 5 V and 177 mA.
Get Citation
Copy Citation Text
Zan Dong, Wei Wang, Beiju Huang, Xu Zhang, Ning Guan, Hongda Chen. Low threshold voltage light-emitting diode in silicon-based standard CMOS technology[J]. Chinese Optics Letters, 2011, 9(8): 082301
Category: Optical devices
Received: Feb. 28, 2011
Accepted: Mar. 25, 2011
Published Online: Jun. 1, 2011
The Author Email: