Infrared and Laser Engineering, Volume. 45, Issue 3, 320001(2016)

Effect of gamma ray irradiation on silicon photodiodes

Luo Donggen1,2、*, Zou Peng1, Chen Dihu1, Wang Yi1, and Hong Jin1
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  • 1[in Chinese]
  • 2[in Chinese]
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    The study on effect of gamma(γ) ray irradiation on silicon photodiodes for on-orbit calibration was carried out. Silicon photodiodes were irradiated by 20 krad(Si), 35 krad(Si) and 50 krad(Si) gamma doses resepctively. The darkness current and spectral responsivity were measured before and after irradiation. It′s found that the darkness current and spectral responsivity have no dramatic change under less than 35 krad(Si) gamma doses. Under 50 krad(Si) gamma doses, the darkness current of the sample increases slightly, but the influence on the application of calibrator can be ignored. The results suggest that silicon photodiode under test can be used as a candidate device for on-orbit calibrator in visible spectral bands due to its good long-term stability and reliability in the space irradiation environment.

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    Luo Donggen, Zou Peng, Chen Dihu, Wang Yi, Hong Jin. Effect of gamma ray irradiation on silicon photodiodes[J]. Infrared and Laser Engineering, 2016, 45(3): 320001

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    Paper Information

    Category: 光电器件与微系统

    Received: Jul. 5, 2015

    Accepted: Aug. 3, 2015

    Published Online: Apr. 5, 2016

    The Author Email: Donggen Luo (dgluo@aiofm.ac.cn)

    DOI:10.3788/irla201645.0320001

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