Optoelectronics Letters, Volume. 9, Issue 3, 177(2013)
An AlxIn1-xAs/GaAs heterojunction ultra-thin film solar cell with 20% efficiency
An ultra-thin film photovoltaic cell, which incorporates an AlxIn1-xAs/GaAs heterojunction, is simulated using Adept 1D simulation tool, and it is with an energy conversion efficiency of 20.06% (under 1 sun, AM1.5G illumination) for 604 nm cell thickness (excluding the substrate thickness), and optimized layer thickness and doping concentration for each layer of the device. The device has an n-type AlAs window layer (highly doped), an n-type AlxIn1-xAs emitter layer and a p-type GaAs base layer. Germanium (Ge) substrate is used for the structure. The device parameters are optimized separately for each layer. Based on these optimizations, the ultra-thin film solar cell design is proposed after careful consideration of lattice mismatch between two adjacent layers of the device.
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K. A. S. M. Ehteshamul Haque. An AlxIn1-xAs/GaAs heterojunction ultra-thin film solar cell with 20% efficiency[J]. Optoelectronics Letters, 2013, 9(3): 177
Received: Oct. 13, 2012
Accepted: --
Published Online: Oct. 12, 2017
The Author Email: K. A. S. M. Ehteshamul Haque (showmo082422@gmail.com)