Infrared and Laser Engineering, Volume. 47, Issue 1, 106002(2018)
Analysis of laser-induced damage mechanism in Si photodiode based on parameter extraction of equivalent circuit
Combined with particle swarm optimization (PSO) algorithm, the parameter of photodiode was extracted from I-V characteristics curve based on the equivalent circuit which was obtained before and after irradiation on Si photodiode. Then the experimental law of equivalent parameter before and after being damaged was acquired. When the photodiode was damaged, the reverse saturation current was decreased and the series resistance was increased, and the shunt resistance was decreased. The damage mechanism was given qualitatively based on semiconductor physics theory. The decrease of the reverse saturation current was on account of decrease in doping concentration. The increase of series resistance was due to the decrease in doping concentration and carrier lifetime. The decrease of the shunt resistance was caused by the defects in the surface and internal of semiconductor.
Get Citation
Copy Citation Text
Shi Yubin, Zhang Jianmin, Zhang Zhen, Lin Xinwei, Cheng Deyan, Dou Pengcheng. Analysis of laser-induced damage mechanism in Si photodiode based on parameter extraction of equivalent circuit[J]. Infrared and Laser Engineering, 2018, 47(1): 106002
Category: 激光技术及应用
Received: Jun. 15, 2017
Accepted: Aug. 20, 2017
Published Online: Jan. 30, 2018
The Author Email: Yubin Shi (shiyubin@nint.ac.cn)