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Chinese Optics Letters, Volume. 9, Issue 1, 010402(2011)

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou1, Changjun Liao2, Zhengjun Wei2, Chunfei Li1, and Shuqiong Yuan2
Author Affiliations
  • 1Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 2Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
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    We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

    Keywords
    040.1345040.3060040.5160040.5570
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    Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes[J]. Chinese Optics Letters, 2011, 9(1): 010402

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    Paper Information

    Received: Jun. 5, 2010

    Accepted: Aug. 20, 2010

    Published Online: Jan. 7, 2011

    The Author Email:

    DOI:10.3788/COL201109.010402

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology