Chinese Journal of Lasers, Volume. 29, Issue s1, 155(2002)

Current Modulation Characteristics of a High Power Semiconductor Laser

YU Jian-hua1,2, HAN Shu-rong1,2, LAI Yin-juan3, LI Rui-ning3, and HUANG Guo-biao2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    In this paper, the current modulation characteristics of a high power GaAs/GaAlAs quantum well laser in low frequencies (100 Hz~20 kHz) were experimentally investigated. The laser characteristics, such as the laser power, the open delay time, the threshold current, the positive duty cycle, in dependent on the modulation frequency and the modulation current were measured.

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    YU Jian-hua, HAN Shu-rong, LAI Yin-juan, LI Rui-ning, HUANG Guo-biao. Current Modulation Characteristics of a High Power Semiconductor Laser[J]. Chinese Journal of Lasers, 2002, 29(s1): 155

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Feb. 23, 2013

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