Acta Optica Sinica, Volume. 20, Issue 3, 423(2000)

Defect Precursors of 5.0 eV Absorption Band in Fused Silica

[in Chinese], [in Chinese], and [in Chinese]
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    Based on the concentration of no-relaxed oxygen deficient center obtained from experiments and the density of states of conduction band electrons calculated by the first-principles, the 5.0 eV linear absorption coefficient of fused silica is presented. The calculated result is coincident with experiments very well, which supports the proposal that no-relaxed oxygen-deficient center is the defect precursors of 5.0 eV absorption band in fused silica.

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    [in Chinese], [in Chinese], [in Chinese]. Defect Precursors of 5.0 eV Absorption Band in Fused Silica[J]. Acta Optica Sinica, 2000, 20(3): 423

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    Paper Information

    Category: Materials

    Received: Oct. 5, 1998

    Accepted: --

    Published Online: Aug. 9, 2006

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