In order to realize the integration of semiconductor laser diodes and detectors on a single chip, the research on the epitaxial material growth and structural process was carried out. A 1.3 μm InGaAsP/InP semiconductor laser diode chip with integrated monitoring photo diode (MPD) was fabricated by introducing an isolation region using an etching process. The photoelectric performance test of the chip shows that the laser diode has a low threshold current (17.62 mA) and high slope efficiency (0.13 mW/mA); the output power can reach 11 mW. In addition, under a reverse bias of -0.7 V, the detector region has a good linear response to the optical signal and the photocurrent of the MPD exceeds 0.3 mA, and the dark current can be as low as 25 nA with a reverse bias of -1.7 V.