Acta Optica Sinica, Volume. 31, Issue s1, 100308(2011)
High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency
Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition (MOCVD) growth condition. By low pressure (LP) MOCVD, GaAsP/GaInP/AlGaInP strained quantum well large optical cavity structure is grown, and high power continuous wave (CW) 808 nm laser diode is fabricated. At 25 ℃ under CW operation condition, an output power of 11.5 W is obtained at 10 A current, with the threshold current being 1.15 A. The wall-plug efficiency reaches 62%. With the operation current of 5.5 A at 40 ℃, less than 2% output power degenerates over 1000 h.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency[J]. Acta Optica Sinica, 2011, 31(s1): 100308
Category: Integrated Optics
Received: Feb. 27, 2011
Accepted: --
Published Online: Jun. 23, 2011
The Author Email: (lipx0419@gmail.com)