Acta Photonica Sinica, Volume. 43, Issue 8, 823003(2014)
Effects of Electrostatic-Discharge on GaN-Based High Voltage Light-Emitting Diode
GaN-based high-voltage green light-emitting diodes were biased by negative Human-Body-Mode electrostatic discharge (ESD) with -500,-1 000,-2 000,-3 000,-4 000,-5 000 and -6 000 V.The I-V characteristic and luminous flux under different electrostatic shock voltages were comparative analyzed after each shock.The results show that the LED has a soft breakdown which accompanied with apparent increased reverse leakage current and unapparent luminous flux change ,which due to the generation of defect after ESD stressing at -500,-1 000,-2 000,-3 000 and -4 000V;When the device was biased to -5 000 V and -6 000 V,a sharp decrease of luminous flux appears,even decay to 50% of light output than before stressing.And forward voltage and reverse leakage current show a large degree of decrease and increase respectively after ESD shock of -6000V,which is due to the thermal model breakdown at this moment.The thermal model breakdown make temperature rise rapidly and form a melting channel,which disabled the LED eventually.
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HAN Yu, GUO Wei-ling, FAN Xing, YU Xin, BAI Jun-xue. Effects of Electrostatic-Discharge on GaN-Based High Voltage Light-Emitting Diode[J]. Acta Photonica Sinica, 2014, 43(8): 823003
Received: Dec. 3, 2013
Accepted: --
Published Online: Sep. 1, 2014
The Author Email: Yu HAN (hanyutianjin@emails.bjut.edu.cn)