In this paper, non uniform well thickness multi quantum wells (NWT MQWs) materials were adopted to widen the output spectrum of superluminescent device. A novel type of 1 55 μm high power wide spectrum InGaAsP/InP integrated superluminescent light source was fabricated based on the tilted ridge waveguide integrated superluminescent light source. The spectral halfwidth is increased from 20～30 nm with the uniform well thickness devices to 45～60 nm. The quasi CW superluminescent power of the device is over 150 mW.