AuGeNi-InP Laser Assisted Aalloying Using CW CO<sub>2</sub> Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 22, Issue 10, 1263(2002)

AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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AuGeNi InP alloy on InP chip and good ohmic contact have been fabricated by means of laser assisted alloying. The minimum contact resistance between the two surfaces of InP substrate is as low as 5.8 Ω. According to the experimental result, influence of some important processing parameters (as alloying time, alloying temperature, the thickness of film, et al.) on ohmic contact are discussed.

Keywords

ohmic contact semiconductor compound laser assisted alloying

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser[J]. Acta Optica Sinica, 2002, 22(10): 1263

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Paper Information

Category: Lasers and Laser Optics

Received: Aug. 13, 2001

Accepted: --

Published Online: Aug. 8, 2006

The Author Email: (ytye@postoff1.uestc.edu.cn)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology