At present, cplane GaNbased lightemitting diodes(LED) have already been mature and commercialized, but they still suffer from the issues of efficiency droop at high injection and low efficiency in the yellowgreen wavelength caused by polarization electric fields. In order to eliminate the influence of polarization electric field, nonpolar/semipolar GaN has attracted people’s research interest. The growth of threedimensional GaN structures based on traditional cplane substrates to obtain nonpolar/semipolar facets has recently been intensively studied due to its simple process and low cost. In this paper, three kinds of growth methods of GaN threedimensional structures are summarized with the analysis of mechanisms at first. And then, the epitaxy and luminescence characteristics of InGaN quantum wells with different crystal planes based on these structures are introduced. Finally, the applications of GaNbased threedimensional structure in semipolar LEDs, colortunable LEDs and phosphorfree white LEDs are shown.