Semiconductor Optoelectronics, Volume. 44, Issue 4, 556(2023)
Mechanism of Liqs “N-Type Doping” in Alq Based Organic Light-Emitting Diodes
Electron-only devices with different structures were prepared by doping Liq (8-hydroxyquinolinato-lithium) into the electron transport layer Alq (tris(8-hydroxyquinolinato) aluminum). The experimental results show that the electrical properties of doped devices are inferior to those of non-doped devices with Liq/Al composite cathodes and superior to those of non-doped devices with Al only cathodes. This indicates that Liq’s doped with Alq does not show any significant “n-doping” effect. The effect exhibits dual roles: Liq molecules dispersed at the Alq/Al cathode interfaces after doping display as electron injection layers, which enhances the device currents by enhancing electron injection; those in the bulk of Alq after doping have a detrimental effect on electron transport due to their own poor conductivity, consequently decrease the device currents. In the tests of electroluminescent devices, the doping of Liq shows a similar behavior. The performance of Liq-doped device is between the non-doped devices with Liq/Al cathode and Al cathode structures, with maximum current efficiencies of 3.96, 4.27 and 2.27 cd/A for the three devices, respectively, and no additional changes caused by charge transfer are observed in the absorption and photoluminescent spectra.
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SU Jiangsen, WU Youzhi, ZOU Wenjing, ZHANG Cairong. Mechanism of Liqs “N-Type Doping” in Alq Based Organic Light-Emitting Diodes[J]. Semiconductor Optoelectronics, 2023, 44(4): 556
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Received: May. 8, 2023
Accepted: --
Published Online: Nov. 26, 2023
The Author Email: Youzhi WU (youzhiwu@163.com)