For the imaging requirements such as high frame rate, global shutter and flat spectral response characteristics, a kind of high-frame rate CMOS image sensor for hyperspectral imaging was designed. The circuit employed 5T (5-transistor) photodiode pixel for global shutter operation. And high-speed readout and signal processing circuits were designed to achieve low fixed pattern noise (FPN) and non-uniformity. The sensor was fabricated in ASMC 0.35μm standard CMOS process. In order to suppress the spectral interference of the photodiode, back-end spectral flatness process was implemented, and the photoelectric response of the device was tested and evaluated. The test results indicate that the circuit has met the design expectation, resulting in pixel array size of 512×256, pixel size of 30μm×30μm, high full well capacity of 400ke-, wide dynamic range of 72dB and frame rate of 450f/s. The quantum efficiency difference between neighboring 10nm spectral band is less than 10%, being able to meet the general requirements of a hyperspectral imaging system.