Chinese Optics Letters, Volume. 7, Issue 5, 05435(2009)
Simulation of quantum-well slipping effect on optical bandwidth in transistor laser
An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-\mum cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design.
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Hassan Kaatuzian, Seyed Iman. Simulation of quantum-well slipping effect on optical bandwidth in transistor laser[J]. Chinese Optics Letters, 2009, 7(5): 05435
Received: Aug. 18, 2008
Accepted: --
Published Online: May. 22, 2009
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