Acta Optica Sinica, Volume. 29, Issue 12, 3409(2009)
The Properties of GaN Schottky Photodetectors
The minimum standard model (MSM) structured photodetectors includes photoconductive type and Schottky type. Schottky GaN MSM photodetectors have been made due to its excellent properties of low dark current,high speed,large responsivity,small parasitic capacitance. MSM structured electrodes were fabricated by using conventional ultraviolet (UV) lithography and wet etching,and Au were used as the metal electrodes. The dark current of the fabricated Schottky GaN UV photodetectors was 3.5 nA at 1 V bias voltage. The maximum responsivity of the device was 0.12 A/W at 362 nm under 1 V bias voltage. The rise time of the device was no more than 10 ns,and the fall time was 210 ns. The influencing factor of the response time has been investigated deeply.
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Zhao Man, Li Jian, Wang Xiaojuan, Zhou Maiyu, Bao Jinhe, Gu Feng. The Properties of GaN Schottky Photodetectors[J]. Acta Optica Sinica, 2009, 29(12): 3409
Category: Instrumentation, Measurement and Metrology
Received: Mar. 3, 2009
Accepted: --
Published Online: Dec. 23, 2009
The Author Email: Man Zhao (zhaoman1982@126.com)