The 43°Y-cut lithium niobate single crystal piezoelectric thin film was prepared by ion implantation transferring method, and the solid-state acoustic reflective thin film bulk acoustic device was prepared with SiO2/Mo as the acoustic reflection structure. The operating frequency of the resonator is at 3 GHz, and the equivalent electromechanical coupling coefficient of LN film is 14.15%. The frequency and temperature characteristic of the resonator is characterized. The results show that although the frequency temperature coefficient of LN single crystal is between (-70~-90)×10-6/℃, the frequency temperature coefficient of the resonator is reduced to -18×10-6/℃ because the acoustic reflection structure contains a SiO2 layer with positive temperature coefficient, which shows that the solid acoustic reflection structure can effectively suppress the temperature drift of LN single crystal thin film and obtain a resonator with low frequency temperature coefficient.