Semiconductor Optoelectronics, Volume. 45, Issue 6, 910(2024)
Numerical Study on Hydride Vapor-Phase Epitaxy Chamber with Showerhead for Gallium Oxide Growth using Orthogonal Experiments
The third-generation semiconductor material α-Ga2O3 is widely used in high-power electronic devices owing to its wide bandgap and excellent Baliga figure of merit. Among many growth methods of α-Ga2O3, hydride vapor-phase epitaxy (HVPE) can meet the requirements of growth rate, quality, and cost in preparing large-scale α-Ga2O3 wafers. A three-dimensional numerical simulation of the α-Ga2O3 growth process in HVPE growth chamber with showerheads was conducted to systematically and effectively evaluate the effect of parameters on growth results. The orthogonal experimental method was introduced to analyze the growth parameters based on computational fluid dynamics (CFD) simulations. The results indicate that growth rate and uniformity are closely related to the substrate tilt angle, O2 inlet rate, N2 inlet rate, GaCl outlet dip angle, and structure of showerheads. This study proposes an optimized combination of parameters, providing a useful reference for achieving a balance between growth rate and growth uniformity of the epitaxial layer in actual experiments.
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WU Shiying, CHEN Lin, JIANG Shaoqing, GUO Fangzheng, TAO Zhikuo. Numerical Study on Hydride Vapor-Phase Epitaxy Chamber with Showerhead for Gallium Oxide Growth using Orthogonal Experiments[J]. Semiconductor Optoelectronics, 2024, 45(6): 910
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Received: May. 26, 2024
Accepted: Feb. 28, 2025
Published Online: Feb. 28, 2025
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