Semiconductor Optoelectronics, Volume. 45, Issue 6, 910(2024)

Numerical Study on Hydride Vapor-Phase Epitaxy Chamber with Showerhead for Gallium Oxide Growth using Orthogonal Experiments

WU Shiying... CHEN Lin, JIANG Shaoqing, GUO Fangzheng and TAO Zhikuo |Show fewer author(s)
Author Affiliations
  • College of Electronic and Optical Engineering, College of Flexible Electronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, CHN
  • show less

    The third-generation semiconductor material α-Ga2O3 is widely used in high-power electronic devices owing to its wide bandgap and excellent Baliga figure of merit. Among many growth methods of α-Ga2O3, hydride vapor-phase epitaxy (HVPE) can meet the requirements of growth rate, quality, and cost in preparing large-scale α-Ga2O3 wafers. A three-dimensional numerical simulation of the α-Ga2O3 growth process in HVPE growth chamber with showerheads was conducted to systematically and effectively evaluate the effect of parameters on growth results. The orthogonal experimental method was introduced to analyze the growth parameters based on computational fluid dynamics (CFD) simulations. The results indicate that growth rate and uniformity are closely related to the substrate tilt angle, O2 inlet rate, N2 inlet rate, GaCl outlet dip angle, and structure of showerheads. This study proposes an optimized combination of parameters, providing a useful reference for achieving a balance between growth rate and growth uniformity of the epitaxial layer in actual experiments.

    Tools

    Get Citation

    Copy Citation Text

    WU Shiying, CHEN Lin, JIANG Shaoqing, GUO Fangzheng, TAO Zhikuo. Numerical Study on Hydride Vapor-Phase Epitaxy Chamber with Showerhead for Gallium Oxide Growth using Orthogonal Experiments[J]. Semiconductor Optoelectronics, 2024, 45(6): 910

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: May. 26, 2024

    Accepted: Feb. 28, 2025

    Published Online: Feb. 28, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024052603

    Topics