SrS phosphors doped with Ce～3+ was prepared by reducing SrSO_4 in H_2 and CS_2 atmosphere, and the influence of these two methods on the structure of powder and the characteristic of photoluminescence was studied. The maximum brightness of Ce: SrS TFEL was 950 cd/m2 under 1000 Hz. The powder of SrGa2S4 doped with Ce3+ was made by high-temprature solid solution method. The Ce: SrGa2S4 thin film was prepared by RF sputtering and the crystal characteristic of it was improved by annealing in H2S atmosphere at over 600℃, also the characteristic was developed. SrGa2S4 thin film electroluminescent device with ceramic as substrate and insulator had a little electoluminescence.