Acta Optica Sinica, Volume. 31, Issue 6, 616002(2011)
Control of Goos-Hnchen Displacement on Bilayer Structure Composed of Single Negative Materials
Goos-Hnchen effect which occurs on the surface of bilayer composed of electric-negative-material (ENM) slab and magnetic-negative-material (MNM) slab is analyzed by using the reflective-phase method and the Gaussian-beam peak-shift criterion. And by using the transfer matrix, it is found that the directions of Goos-Hnchen displacement are different between the situation when the beams reflect from the ENM and the situation that happen on MNM. It also shows that the Goos-Hnchen displacement of such bilayer can be controlled expediently by adjusting the thickness of one layer as the indices of ENM slab are opposite to those of MNM slab.
Get Citation
Copy Citation Text
Zhang Xi, Xu Jingping, Yang Yaping. Control of Goos-Hnchen Displacement on Bilayer Structure Composed of Single Negative Materials[J]. Acta Optica Sinica, 2011, 31(6): 616002
Category: Materials
Received: Jan. 7, 2011
Accepted: --
Published Online: May. 27, 2011
The Author Email: Xi Zhang (differentbeat@163.com)