Acta Optica Sinica, Volume. 30, Issue s1, 100217(2010)

Investigation of Multi-quantum Wells Semiconductor Ring Laser

Qi Lifang1、*, Li Xianjie1, Guo Weilian2, Yu Jinlong2, Zhao Yonglin1, Mao Luhong2, Yu Xin2, Gao Xiangzhi1, Cai Daomin1, and Yin Shunzheng1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less

    With the development of photonic integrated circuits and all-optical networks, semiconductor ring lasers (SRL) based on the structure of ring resonator have received increasing attention and have been one of the focuses in the field of integrated optics in recent years. The design, fabrication and test of a semiconductor ring laser with two coupling bus waveguide are reported in this paper. The width of the ring resonator is 3.4 μm, the ring radius is 349 μm, the gap between the ring resonator and the bus waveguides is 1.0 μm, the threshold current of the (SRL) is 36 mA, the free spectral range FSR is 0.33 nm, and the center lasing wavelength is 1566.66 nm when injected current is 61 mA. Coupling an optical fiber to an end of the bus waveguide, the output optical power reaches to 40 μW. Semiconductor ring laser’s bidirectional operation state, unidirectional bistability operation and unstable alternating oscillation operation state are observed through the P-I characteristic plot. At last, the spectral characteristics of lasing and non-lasing are analyzed when the ring laser operates in unidirectional bistable region.

    Tools

    Get Citation

    Copy Citation Text

    Qi Lifang, Li Xianjie, Guo Weilian, Yu Jinlong, Zhao Yonglin, Mao Luhong, Yu Xin, Gao Xiangzhi, Cai Daomin, Yin Shunzheng. Investigation of Multi-quantum Wells Semiconductor Ring Laser[J]. Acta Optica Sinica, 2010, 30(s1): 100217

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Fiber Optics and Optical Communications

    Received: Aug. 23, 2010

    Accepted: --

    Published Online: Dec. 21, 2010

    The Author Email: Lifang Qi (cube2001@sina.com)

    DOI:10.3788/aos201030.s100217

    Topics