Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Optoelectronics Letters, Volume. 10, Issue 4, 269(2014)

Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP

Xia LIU1...2,*, Lian-zhen CAO1,2, Hang SONG2 and Hong JIANG2 |Show fewer author(s)
Author Affiliations
  • 1Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
  • 2State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
    • show less
    Abstract
    Figures&Tables (0)
    Equations (0)
    References (19)
    Tools
    Paper Information
    Topics

    InAs0.6P0.4epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4epilayers.

    Tools

    Get Citation

    Copy Citation Text

    LIU Xia, CAO Lian-zhen, SONG Hang, JIANG Hong. Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP[J]. Optoelectronics Letters, 2014, 10(4): 269

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Received: May. 16, 2014

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Xia LIU (liuxia@wfu.edu.cn)

    DOI:10.1007/s11801-014-4082-y?

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology