Chinese Journal of Quantum Electronics, Volume. 21, Issue 6, 859(2004)

Raman spectra of AlGaInP/GaInP multiple-quantum wells

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    AlGalnP/GalnP MQW samples of different numbers of wells were grown by LP-MOCVD and their Raman spectra were measured. Because of the doped current spreading layer, Ohm touching layer, top confining layer and bottom confining layer, coupled elec-tron(hole) -plasmon-LO-phonon modes are observed in Raman spectra. According to the Raman selection rule and the PL measurement, it is reasonable to evaluate the quality of AlGalnP/GalnP MQW by analyzing the relative intensity ratio of A1P-LO/TO.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Raman spectra of AlGaInP/GaInP multiple-quantum wells[J]. Chinese Journal of Quantum Electronics, 2004, 21(6): 859

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    Paper Information

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    Received: Jul. 25, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (lianhui_chen@163.com)

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