Chinese Journal of Quantum Electronics, Volume. 21, Issue 6, 859(2004)
Raman spectra of AlGaInP/GaInP multiple-quantum wells
AlGalnP/GalnP MQW samples of different numbers of wells were grown by LP-MOCVD and their Raman spectra were measured. Because of the doped current spreading layer, Ohm touching layer, top confining layer and bottom confining layer, coupled elec-tron(hole) -plasmon-LO-phonon modes are observed in Raman spectra. According to the Raman selection rule and the PL measurement, it is reasonable to evaluate the quality of AlGalnP/GalnP MQW by analyzing the relative intensity ratio of A1P-LO/TO.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Raman spectra of AlGaInP/GaInP multiple-quantum wells[J]. Chinese Journal of Quantum Electronics, 2004, 21(6): 859