Chinese Optics Letters, Volume. 7, Issue 10, 882(2009)

Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field

Y. Yao1,2, T. Ochiai1, T. Mano1, T. Kuroda1, T. Noda1, N. Koguchi3, and K. Sakoda1,2
Author Affiliations
  • 1National Institute for Materials Science, Namiki 1-1, Tsukuba 305-0044, Japan
  • 2University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
  • 3L-NESS, Universitá di Milano Bicocca, Via Cozzi 52, Milano 20125, Italy
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    A three-dimensional model of GaAs/AlGaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method. The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies. It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm.

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    Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, K. Sakoda. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field[J]. Chinese Optics Letters, 2009, 7(10): 882

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    Paper Information

    Received: Jul. 14, 2009

    Accepted: --

    Published Online: Oct. 16, 2009

    The Author Email:

    DOI:10.3788/COL20090710.0882

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