Acta Optica Sinica, Volume. 41, Issue 20, 2013001(2021)
Solar Cells Based on Bottom-Reflectivity-Enhanced GaAs Radial p-i-n Junction Nanowire Array
A solar cell based on bottom-reflectivity-enhanced GaAs radial p-i-n junction nanowire array is proposed, and its spectral absorption and photovoltaic performance are studied by finite-different time-domain method and finite element method. The results show that replacing SiO2 between the polymer and the substrate with MgF2 dielectric layer with low refractive index not only significantly reduces the absorption loss of the substrate, but also significantly improves the optical absorptance of the nanowire array in the whole wavelength range. Moreover, the photoelectric conversion efficiency of the solar cell can be improved to 13.9% by optimizing the thickness of i region and the length of nanowire. This study provides a feasible way to realize low-cost and high-performance nano solar cells.
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Haoran Liu, Xin Yan, Xueguang Yuan, Yangan Zhang, Xia Zhang. Solar Cells Based on Bottom-Reflectivity-Enhanced GaAs Radial p-i-n Junction Nanowire Array[J]. Acta Optica Sinica, 2021, 41(20): 2013001
Category: Integrated Optics
Received: Mar. 24, 2021
Accepted: May. 6, 2021
Published Online: Sep. 30, 2021
The Author Email: Yan Xin (xyan@bupt.edu.cn)