Semiconductor Optoelectronics, Volume. 43, Issue 3, 490(2022)
Progress of Radiation Effects on GaInP/GaAs/Ge Triple Junction Solar Cells
With the wide applications of GaInP/GaAs/Ge threejunction solar cells used in spacecraft as a space power supply system, the problem of space radiation damage is widely concerned. The performance of GaInP/GaAs/Ge threejunction solar cells will be degraded by the irradiation of the electrons, protons and other radiation particles or rays in the space radiation environment. In this paper, the research progress of the radiation experiments of GaInP/GaAs/Ge triplet solar cells induced by the electrons, protons and other radiation particles or rays at home and abroad is introduced in depth, and then the research progress of the simulation of radiation damage effect, radiation hardening, and radiation damage prediction of GaInP/GaAs/Ge threejunction solar cells is reviewed. The key problems in the research of radiation damage effect on GaInP/GaAs/Ge threejunction solar cells are summarized. It provides theoretical guidance and experimental technical support for the establishment of the experimental method of radiation damage effect, the analysis of damage mechanism, the prediction of inorbit life and the research of radiation hardening technology of GaInP/GaAs/Ge threejunction solar cells.
Get Citation
Copy Citation Text
WANG Zujun, WANG Xinghong, YAN Shixing, TANG Ning, CUI Xinyu, ZHANG Qi, SHI Mengqi, HUANG Gang, NIE Xu, LAI Shankun. Progress of Radiation Effects on GaInP/GaAs/Ge Triple Junction Solar Cells[J]. Semiconductor Optoelectronics, 2022, 43(3): 490
Special Issue:
Received: May. 30, 2022
Accepted: --
Published Online: Aug. 1, 2022
The Author Email: Zujun WANG (wzj029@qq.com)