Acta Optica Sinica, Volume. 40, Issue 19, 1914001(2020)
975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss
By optimizing the doping distribution of the waveguide structure and the P-cladding layer, the overlap between the optical field and the P-cladding layer doped area is reduced, thereby reducing the internal optical loss of the semiconductor laser. At the same time, the use of wide band gap GaAsP as the barrier layer reduces the carrier leakage in the active region and achieves an internal optical loss of 0.259 cm -1. The prepared single emitter device with a wavelength of 975 nm, a stripe width of 100 μm and a cavity length of 4 mm has a continuous-wave output optical power of 21 W at room temperature. When the output power is 20 W, the power conversion efficiency is still greater than 50%.
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Yuxuan Man, Li Zhong, Xiaoyu Ma, Suping Liu. 975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss[J]. Acta Optica Sinica, 2020, 40(19): 1914001
Category: Lasers and Laser Optics
Received: Apr. 27, 2020
Accepted: Jun. 11, 2020
Published Online: Sep. 19, 2020
The Author Email: Zhong Li (zhongli@semi.ac.cn)