Laser & Optoelectronics Progress, Volume. 54, Issue 7, 70005(2017)
Progress on Interfacial Control of Quantum Dot Light-Emitting Diodes
Due to the difference in energy band and mobility of material in the charge transfer layers of the quantum dot light-emitting diode (QLED), the unbalanced charge injection inevitably occurs. In order to fabricate a high-performance QLED with the most balanced charge injection, the interfacial control is commonly used. Combined with the QLED structures, the recent research progress on the QLED interfacial control for anodes, cathodes, and two-phase interfaces is reviewed. The interfacial control mechanisms and the effects of the interfacial control on the QLED performance are discussed. Challenges and trends in the development of QLED are presented.
Get Citation
Copy Citation Text
Gu Wei, Pi Xiaodong, Yang Deren. Progress on Interfacial Control of Quantum Dot Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2017, 54(7): 70005
Category: Reviews
Received: Jan. 18, 2017
Accepted: --
Published Online: Jul. 5, 2017
The Author Email: