Chinese Journal of Lasers, Volume. 24, Issue 3, 193(1997)

Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    The characteristic of a LD pumped highly efficient Nd:S VAP laser using a plano plano resonator is presented. The output power at 1.065 μm is 233 mW for an incident pump power of 577 mW, yielding an optical efficiency of 42.4%.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser[J]. Chinese Journal of Lasers, 1997, 24(3): 193

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    Paper Information

    Category: Laser physics

    Received: Feb. 9, 1996

    Accepted: --

    Published Online: Oct. 31, 2006

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