Journal of Advanced Dielectrics, Volume. 13, Issue 6, 2345004(2023)
Enhanced optoelectronic characteristics of MoS2-based photodetectors through hybridization with CdSSe nanobelt
Aimin Liu1... Jiyu Zhao1, Qiuhong Tan1,2,3,*, Peizhi Yang2, Yingkai Liu1,2,3, and Qianjin Wang1,23,**
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Author Affiliations
1College of Physics and Electronic Information Yunnan Normal University, Yunnan Kunming 650500, P. R. China2Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, P. R. China3Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education Yunnan Normal University, Yunnan Kunming 650500, P. R. Chinashow less
Monolayer molybdenum disulfide (MoS2) has weak light absorption due to its atomically-thin thickness, thus hindering the development of MoS2-based optoelectronic devices. CdSxSe has excellent photoelectric performance in the visible light range, and its nanostructure shows great potential in new nanoscale electronic and optoelectronic devices. In this work, a composite photodetector device with the combination of monolayer MoS2 nanosheets and CdSSe nanobelts has been successfully prepared, which can not only maintain the inherent excellent properties of the two blocks, but also play a synergistic role between them, thus improving the photoelectric performance of the device. The monolayer MoS2 nanosheet /CdSSe nanobelt photodetector has a wide spectral response range (400–800nm), high responsivity (527.22A/W) and large external quantum efficiency (EQE) (%). Compared with the isolated monolayer MoS2 nanosheet, both the responsivity and EQE of the hybrid photodetector are increased by 117.4 times under 620nm illumination. This study provides a way to prepare hybrid photodetectors with wide spectral response and high responsivity.