Journal of Advanced Dielectrics, Volume. 13, Issue 6, 2345004(2023)

Enhanced optoelectronic characteristics of MoS2-based photodetectors through hybridization with CdS0.42Se0.58 nanobelt

Aimin Liu1, Jiyu Zhao1, Qiuhong Tan1,2,3、*, Peizhi Yang2, Yingkai Liu1,2,3, and Qianjin Wang1,2,3、**
Author Affiliations
  • 1College of Physics and Electronic Information Yunnan Normal University, Yunnan Kunming 650500, P. R. China
  • 2Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, P. R. China
  • 3Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education Yunnan Normal University, Yunnan Kunming 650500, P. R. China
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    Monolayer molybdenum disulfide (MoS2) has weak light absorption due to its atomically-thin thickness, thus hindering the development of MoS2-based optoelectronic devices. CdSxSe1x has excellent photoelectric performance in the visible light range, and its nanostructure shows great potential in new nanoscale electronic and optoelectronic devices. In this work, a composite photodetector device with the combination of monolayer MoS2 nanosheets and CdS0.42Se0.58 nanobelts has been successfully prepared, which can not only maintain the inherent excellent properties of the two blocks, but also play a synergistic role between them, thus improving the photoelectric performance of the device. The monolayer MoS2 nanosheet /CdS0.42Se0.58 nanobelt photodetector has a wide spectral response range (400–800nm), high responsivity (527.22A/W) and large external quantum efficiency (EQE) (1.06×105%). Compared with the isolated monolayer MoS2 nanosheet, both the responsivity and EQE of the hybrid photodetector are increased by 117.4 times under 620nm illumination. This study provides a way to prepare hybrid photodetectors with wide spectral response and high responsivity.

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    Aimin Liu, Jiyu Zhao, Qiuhong Tan, Peizhi Yang, Yingkai Liu, Qianjin Wang. Enhanced optoelectronic characteristics of MoS2-based photodetectors through hybridization with CdS0.42Se0.58 nanobelt[J]. Journal of Advanced Dielectrics, 2023, 13(6): 2345004

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    Paper Information

    Category: Research Articles

    Received: Aug. 22, 2023

    Accepted: Oct. 8, 2023

    Published Online: Jan. 22, 2024

    The Author Email: Tan Qiuhong (tanqiuhong1@126.com), Wang Qianjin (qjwang@xtu.edu.cn)

    DOI:10.1142/S2010135X23450042

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