pCuO films were deposited on nSi and glass substrates through reactive magnetron sputtering. The structural and optical properties of the pCuO films were investigated using Xray diffraction (XRD) and UVVisNIR spectrophotometer. The average crystal size and optical band gap of the deposited pCuO films were determined to be ~8 nm and ~1.36 eV, respectively. The formation of a pn junction between the pCuO film and nSi substrate was confirmed by examining the currentvoltage behavior of the junction. The pCuO/nSi junction cell had an opencircuit voltage of 0.33 V and shortcircuit current density of 6.27 mA/cm2 under AM 1.5 illumination. The fill factor and energy conversion efficiency were 0.2 and 0.41%, respectively.