Chinese Journal of Quantum Electronics, Volume. 39, Issue 5, 752(2022)

Perovskite photodetector based on CH3NH3PbI3 thin film arrays

Yuqi YE1,2、*, Shimao WANG1, Xueyan SHAN1,2, Xiao ZHAO1,2, and Gang MENG1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Halide perovskite possesses excellent photoelectric properties and can be prepared by low-temperature solution method. Photodetector arrays made of halide perovskite are highly required in the area of imaging, optical communication and other fields. However, halide perovskite can be easily dissolved by conventional solvents (including developer), which makes it incompatible with photolithography process. Herein, a novel method based on spin coating (the polar perovskite precursor solution only infiltratesthe hydrophilic pattern area) and low-temperature annealing has been proposed to prepare perovskite arrays, which can solve the problem of incompatibility between polar solvents and perovskite materials. The fabricated photodetector based on CH3NH3PbI3 thin film arrays exhibits good photoelectric performance, with a high detectivity of 4.7×1011Jones and the responsivity of 0.055 A/W under 530 nm light irradiation. This work provides a simple and effective strategy to prepare well-defined perovskite photodetector arrays based on thin film array.

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    YE Yuqi, WANG Shimao, SHAN Xueyan, ZHAO Xiao, MENG Gang. Perovskite photodetector based on CH3NH3PbI3 thin film arrays[J]. Chinese Journal of Quantum Electronics, 2022, 39(5): 752

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    Paper Information

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    Received: Feb. 24, 2021

    Accepted: --

    Published Online: Oct. 14, 2022

    The Author Email: Yuqi YE (yyq106@mail.ustc.edu.cn)

    DOI:10.3969/j.issn.1007-5461.2022.05.008

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