Frontiers of Optoelectronics, Volume. 5, Issue 2, 157(2012)

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Guangcun SHAN1,2、*, Xinghai ZHAO1,3, Mingjun HU2, Chan-Hung SHEK2, and Wei HUANG4
Author Affiliations
  • 1State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
  • 3Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
  • 4Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
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    The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells (QWs) to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

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    Guangcun SHAN, Xinghai ZHAO, Mingjun HU, Chan-Hung SHEK, Wei HUANG. Vertical-external-cavity surface-emitting lasers and quantum dot lasers[J]. Frontiers of Optoelectronics, 2012, 5(2): 157

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    Paper Information

    Received: Dec. 29, 2011

    Accepted: Feb. 9, 2012

    Published Online: Feb. 23, 2013

    The Author Email: SHAN Guangcun (guangcunshan@mail.sim.ac.cn)

    DOI:10.1007/s12200-012-0237-2

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