Acta Photonica Sinica, Volume. 35, Issue 4, 549(2006)
1.55 μm Low-temperature-grown GaAs Resonant Cavity Enhanced Photodetector
1.55 μm resonant cavity enhanced photodetector was fabricated using low-temperature grown GaAs as the absorption layer. Its electrical and optical characteristics were investigated. Under 0 V bias without incident light the dark current was 8 X 10-11 A,the peak wavelength of the photocurrent was 1563nm with fullwidth at half maximum(FWHM) 4 nm.
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Han Qin, Peng Hongling, Du Yun, Ni Haiqiao, Zhao Huan, Niu Zhichuan, Wu Ronghan. 1.55 μm Low-temperature-grown GaAs Resonant Cavity Enhanced Photodetector[J]. Acta Photonica Sinica, 2006, 35(4): 549
Category: Optoelectronics
Received: Jan. 3, 2005
Accepted: --
Published Online: Jun. 3, 2010
The Author Email: Qin Han (hanqin@red.semi.ac.cn)
CSTR:32186.14.