It is difficult to obtain a nanoimprint stamp with low cost and high quality in fabrication of Distributed Feedback(DFB)gratings. In this paper, the quartz stamp for semiconductor DFB gratings was fabricated by using double-layer metal mask and lift-off lithography. Firstly, the photoresist pattern of a DFB grating was written on a Ti coated quartz substrate by electron beam lithography, then a layer of metal Ni was sputtered on it to obtain a corresponding pattern by metal lift-off technology. Finally, the Inductively Coupled Plasma(ICP)dry etching was used to transfer the pattern on the quartz substrate. The scanning electron microscope image of the fabricated stamp shows good uniformity with sufficiently low line edge roughness. The stamp is suitable to fabricate DFB grating for 1 310 nm semiconductor laser diodes using UV nanoimprint lithography.