Acta Optica Sinica, Volume. 39, Issue 9, 0914001(2019)
1.55-μm High-Power High-Speed Directly Modulated Semiconductor Laser Array
We design and fabricate a 1.55-μm high-speed high-power distributed feedback laser array based on the AlGaInAs material. We adopt the AlGaInAs material that exhibits good temperature characteristics and high differential gain as a quantum well and waveguide layer to achieve high power and wide bandwidth. Further, we use a dilute waveguide to reduce internal loss and optimize the far-field divergence angle; subsequently, a suspended grating is used to optimize coupling coefficient, and the single-mode stable operation with large injection current is realized. Based on this optimized material structure, we fabricate a 1.5-μm laser array at five different wavelengths. In continuous-wave operation at room temperature, each laser in the array can achieve a single-mode lasing power of greater than 100 mW (the maximum output power of a single laser is 160 mW), a side-mode suppression ratio of greater than 55 dB, a small-signal-modulation bandwidth of 7 GHz, the narrowest linewidth of 520 kHz, and a relative intensity noise of -145 dB/Hz.
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Hao Wang, Ruikang Zhang, dan Lu, Baojun Wang, Yongguang Huang, Wei Wang, Lingjuan Zhao. 1.55-μm High-Power High-Speed Directly Modulated Semiconductor Laser Array[J]. Acta Optica Sinica, 2019, 39(9): 0914001
Category: Lasers and Laser Optics
Received: Mar. 14, 2019
Accepted: May. 5, 2019
Published Online: Sep. 9, 2019
The Author Email: Wang Hao (haowang@semi.ac.cn), Zhang Ruikang (rkzhang@semi.ac.cn)