The indium antimonide (InSb)electrode is prone to sidewall fracture due to its three-dimensional characteristics. Interconnected indium bumps will invade the inside of the electrode, affecting the reliability of the InSb chip. Three-dimensional electrode systems were prepared by ion beam sputtering deposition, thermal evaporation and magnetron sputtering. It was characterized by the focused ion beam (FIB) method and scanning electron microscope (SEM). The results show that the electrodes prepared by thermal evaporation and magnetron sputtering have good three-dimensional coverage, but there are problems with electrodes falling off and difficulty in peeling off. The ion beam sputtering deposition method can achieve high-quality preparation of three-dimensional InSb electrodes by changing the deposition angle and removing the correction baffle.